產(chǎn)品詳情
| mos管型號 | 溝道 | 封裝 | 內(nèi)阻(m?) | 電流(A) | 耐壓(V) | 狀態(tài) | 代替型號 | 規(guī)格書 | 樣品 |
|---|---|---|---|---|---|---|---|---|---|
| QT40P02DF | P | DFN3X3-8L | 9m? | 40A | 20V | 量產(chǎn) |
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申請 |
* 上方QT40P02DF芯片參數(shù)僅供參考，詳細技術參數(shù)請以QT40P02DF技術規(guī)格書為準
The 40P02DFMOS?uses advanced trench technologyto provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as2.5V. This device is suitable for use as aBattery protection or in other Switching application.
40P02DFMOS?General Features
VDS=-20V? ID=-40A
RDS(ON)<9mΩ@ VGS=-10V
40P02DFMOS?Application
Battery protectionLoad switch
Uninterruptible power supply
40P02DFMOS 使用先進的溝槽技術提供出色的 RDS(ON)、低柵極電荷和
40P02DFMOS?一般特點
VDS=-20V ID=-40A
RDS(ON)<9mΩ@ VGS=-10V
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電池保護負載開關
不間斷電源
Absolute Maximum Ratings(TA=25℃unless otherwise noted)
Typical Characteristics
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Absolute Maximum Ratings(TA=25℃unless otherwise noted)
| Symbol | Parameter | Rating | Units |
|
| VDS | Drain-Source Voltage | -20 | V |
|
| VGS | Gate-Source Voltage | ±8 | V |
|
| ID@TC=25℃ | Continuous Drain Current, VGS?@ -4.5V1 | -20 | A |
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| ID@TC=70℃ | Continuous Drain Current, VGS?@ -4.5V1 | -18 | A |
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| IDM | Pulsed Drain Current2 | -100 | A |
|
| PD@TC=25℃ | Total Power Dissipation3 | 29 | W |
|
| PD@TC=70℃ | Total Power Dissipation3 | 19 | W |
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| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
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| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
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| RθJA | Thermal Resistance Junction-Ambient?1 | 75 | ℃/W |
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| RθJA | Thermal Resistance Junction-Ambient?1?(t ≤10s) | 40 | ℃/W |
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| RθJC | Thermal Resistance Junction-Case1 | 4.2 | ℃/W |
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Typical Characteristics
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