產(chǎn)品詳情
| brand | model | QQ email | Personal official website |
| ABB | 5SHY35L4510 3BHE014105R0001 |
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| weight | Specifications | Telephone |
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| 10kg | 15cm | +86 18030177759 |
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You should always make sure to properly ground the 369-HI-0-M-0-0-E. You must connect both the Safety ground and the Filter ground (terminal 126 and 123 respectively) to the main Ground Bus to properly ground the unit.
Frequently Asked Questions about 369-HI-0-M-0-0-E
What are the control power specifications of the 369-LO-0-M-F-E-0-E motor management relay?
The 369-LO-0-M-F-E-0-E has a low (LO) control power specification. The VDC range is from 20-60 and the VAC control power range for this 369 Multilin motor management relay is 20 to 48. This low specification is in comparison to the high (HI) option, which is 50-300 VDC and 60 to 265 VAC control power.
What additional features are present for the 369-LO-0-M-F-E-0-E Multilin General Electric digital relay?
Additional features of the 369-LO-0-M-F-E-0-E are the optional metering package. This package provides three extra configurable analog outputs in addition to the base unit's single analog output. This package also provides the unit with bs for power and voltage elements with the ability to meter various specifics such as V, kW, etc.
The 369-LO-0-M-F-E-0-E also contains the optional fiber optic port denoted by the (F) option. This data b for the fiber optic is for more harsh environments or for RRTD hook up. The fiber sizes are 50/125, 62.5/125, 100/140, and 200 micrometers. The type of LED emitter is a 820 nm LED with multimode features.
What is the purpose of the optional fiber optic port for the 369-LO-0-M-F-E-0-E?
The purpose of the fiber optic port (option F) for the 369-LO-0-M-F-E-0-E is to allow a remote module RTD to hookup to the motor management relay.369-HI-0-M-0-0-E是GE Multilin制造的電機(jī)管理繼電器?？刂齐娫礊?0-300 VDC/40-265 VAC。此繼電器上沒有可選RTD輸入。該裝置包括一個(gè)可選的計(jì)量包。沒有可選的光纖端口。該繼電器為三相電機(jī)及其相關(guān)系統(tǒng)提供保護(hù)和監(jiān)控。369可以“學(xué)習(xí)”各個(gè)電機(jī)參數(shù)，并適應(yīng)各個(gè)應(yīng)用。為了提高繼電器的保護(hù)能力，用戶可以調(diào)整電機(jī)浪涌電流、冷卻速度和/或加速時(shí)間。如果您對該電機(jī)管理繼電器或相關(guān)系列或制造商有任何疑問，請聯(lián)系A(chǔ)X Control。
設(shè)定點(diǎn)鍵允許用戶瀏覽可編程參數(shù)頁面標(biāo)題。實(shí)際值鍵允許用戶瀏覽測量參數(shù)頁面標(biāo)題。頁面向上和向下鍵可用于滾動(dòng)頁面標(biāo)題，查看實(shí)際值和設(shè)定點(diǎn)。上下對齊鍵可用于滾動(dòng)瀏覽副標(biāo)題。值向上和向下鍵允許用戶滾動(dòng)瀏覽設(shè)定點(diǎn)編程模式中的變量。重置鍵允許用戶重置跳閘或鎖定報(bào)警。輸入鍵可以輸入子組或存儲更改的設(shè)定值。清除鍵可以退出子組或?qū)⒏牡脑O(shè)定點(diǎn)返回到其原始值。對于上下文相關(guān)的幫助消息，可以隨時(shí)按幫助鍵。
應(yīng)始終確保369-HI-0-M-0-0-E正確接地。必須將安全接地和過濾器接地（分別為端子126和123）連接到主接地母線，以正確接地裝置。
關(guān)于369-HI-0-M-0-0-E的常見問題
369-LO-0-M-F-E-0-E電機(jī)管理繼電器的控制電源規(guī)格是什么？
369-LO-0-M-F-E-0-E具有低（LO）控制功率規(guī)格。VDC范圍為20-60，此369 Multilin電機(jī)管理繼電器的VAC控制功率范圍為20至48。此低規(guī)格與高（HI）選項(xiàng)相比，后者為50-300 VDC和60-265 VAC控制電源。
369-LO-0-M-F-E-0-E Multilin General Electric數(shù)字繼電器有哪些附加功能？
369-LO-0-M-F-E-0-E的其他功能是可選的計(jì)量包。除了基本單元的單個(gè)模擬輸出外，該軟件包還提供三個(gè)額外的可配置模擬輸出。該軟件包還為裝置提供了功率和電壓元件的輸入，能夠測量各種具體參數(shù)，如V、kW等。
369-LO-0-M-F-E-0-E還包含由（F）選項(xiàng)表示的可選光纖端口。此光纖數(shù)據(jù)鏈路用于更惡劣的環(huán)境或RRTD連接。光纖尺寸為50/125、62.5/125、100/140和200微米。LED發(fā)射器類型為820 nm LED，具有多模特性。
369-LO-0-M-F-E-0-E的可選光纖端口的用途是什么？
369-LO-0-M-F-E-0-E的光纖端口（選項(xiàng)F）的用途是允許遠(yuǎn)程模塊RTD連接到電機(jī)管理繼電器。The most popular and commonly used power electronic switch devices are the Bipolar Junction Transistor BJT and the MOSFET. We have already discussed in detail about the working of BJT and the working of MOSFET and how they are used in circuits. But, both these components had some limitations to be used in very high current applications. So, we moved another popular power electronic switching device called the IGBT. You can think of IGBT as a fusion between BJT and MOSFET, these components have the b characteristics of a BJT and output characteristics of a MOSFET. In this article, we get familiar with the basics of IGBT, how they work, and how to use them in your circuit designs.
IGBT is the short b of Insulated Gate Bipolar Transistor. It is a three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse b modulation (PWM). The typical symbol of IGBT along with its image is shown below.As mentioned earlier an IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the b side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.
IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN transistor, and MOSFET. IGBT combines the low saturation voltage of a transistor with the high b impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a MOSFET.Since IGBT is the combination of MOSFET and BJT they are also called by different names. The different names of IGBT are Insulated Gate Transistor( IGT), Metal Oxide Insulated Gate Transistor (MOSIGT), Gain Modulated Field Effect Transistor (GEMFET), Conductively Modulated Field Effect Transistor (COMFET).IGBT has three terminals attached to three different bl layers, the bl layer of the gate terminal is insulated from the semiconductors by a layer of silicon dioxide (SIO2). IGBT is constructed with 4 layers of semiconductor sandwiched together. The layer closer to the collector is the p+ substrate layer above that is the n- layer, another p layer is kept closer to the emitter and inside the p layer, we have the n+ layers. The junction between the p+ layer and n- layer is called the junction J2 and the junction between the n- layer and the p layer is called the junction J1. The structure of IGBT is shown in the figure below.To understand the working of the IGBT, consider a voltage source VG connected positively to the Gate terminal with respect to the Emitter. Consider other voltage source VCC connected across The Emitter and the Collector, where Collector is kept positive with respect to the Emitter. Due to the voltage source VCC the junction J1 will be forward-biased whereas the junction J2 will be reverse biased. Since J2 is in reverse bias there will not be any current flow inside the IGBT(from collector to emitter).
Initially, consider that there is no voltage applied to the Gate terminal, at this stage the IGBT will be in a non-conductive state. Now if we increase the applied gate voltage, due to the capacitance effect on the SiO2 layer the negative ions will get accumulated on the upper side of the layer and the positive ions will get accumulated on the lower side of the SiO2 layer. This will cause the insertion of negative charge carriers in the p region, higher the applied voltage VG greater the insertion of negatively charged carriers. This will lead to a bation of the channel between the J2 junction which allows the flow of current from collector to emitter. The flow of current is represented as the current path in the picture, when the applied Gate voltage VG increases the amount of current flow from the collector to the emitter also increases.The IGBT is classified as two types based on the n+ buffer layer, the IGBTs that are having the n+ buffer layer is called the Punch through IGBT (PT-IGBT), the IGBTs that does not have an n+ buffer layer are called the Non-Punch Through- IGBT (NPT- IGBT).
Based on their characteristics the NPT- IGBT, and PT-IGBT are named as symmetrical and nonsymmetrical IGBTs. The symmetrical IGBTs are the ones that have equal forward and reverse breakdown voltage. The asymmetric IGBTs are the ones that have a reverse breakdown voltage less than the forward breakdown voltage. The symmetrical IGBTs are mostly used in AC circuits, whereas the asymmetrical IGBTs are mostly used in DC circuits because they don’t need to support voltage in the reverse direction.The collector of the PNP transistor is connected to the NPN transistor through a JFET, the JFET connects the collector of the PNP transistor and the base of the PNP transistor. These transistors are arranged in a way to b a parasitic thyristor set up to create a negative feedback loop. The Resistor RB is placed to short the base and emitter terminals of the NPN transistor to ensure that the thyristor doesn’t latch-up which leads to the latch-up of the IGBT. The JFET used here will signify the structure of current between any two IGBT cells and allows the MOSFET and supports most of the voltage.
